IRFHM8326PBF 1 www.irf.com ? 2013 international rectifier march 14, 2013 hexfet ? power mosfet base part number package type standard pack orderable part number ? ? form quantity IRFHM8326PBF pqfn 3.3 mm x 3.3 mm tape and reel 4000 irfhm8326trpbf v dss 30 v r ds(on) max (@ v gs = 10v) 4.7 ? (@ v gs = 4.5v) 6.7 qg (typical) 20 ? nc i d (@t c (bottom) = 25c) 70 ? a m ??? v gs max 20 v features benefits low thermal resistance to pcb (<3.4c/w) enable better thermal dissipation low profile (<1.05 mm) increased power density industry-standard pinout results in multi-vendor compatibility compatible with existing surface mount techniques ?? easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, consumer qualification increased reliability notes ? through ? are on page 8 absolute maximum ratings ?? parameter max. units v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 19 a i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 70 ? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 44 ? i dm pulsed drain current ? 278 p d @t a = 25c power dissipation ? 2.8 w p d @t c(bottom) = 25c power dissipation ? 37 linear derating factor ? 0.023 w/c t j operating junction and -55 to + 150 c t stg storage temperature range i d @ t a = 70c continuous drain current, v gs @ 10v 15 i d @ t c = 25c continuous drain current, v gs @ 10v (source bonding technology limited) 25 ? applications ?? charge and discharge switch for notebook pc battery application ?? system/load switch ?? synchronous mosfet for buck converters ? 3 2 1 8 7 6 5 4 d d d d s s s g top view pqfn 3.3x3.3 mm ? s g s s d d d d d free datasheet http://
? IRFHM8326PBF 2 www.irf.com ? 2013 international rectifier march 14, 2013 d s g static @ t j = 25c (unless otherwise specified) ???? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient ??? 22 ??? mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 3.8 4.7 m ? v gs = 10v, i d = 20a ? ??? 5.2 6.7 v gs = 4.5v, i d = 20a ? v gs(th) gate threshold voltage 1.2 1.7 2.2 v v ds = v gs , i d = 50a ? v gs(th) gate threshold voltage coefficient ??? -10 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 24v, v gs = 0v i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v gfs forward transconductance 70 ??? ??? s v ds = 10v, i d = 20a q g total gate charge ??? 39 ??? nc v gs = 10v, v ds = 15v, i d = 20a q g total gate charge ??? 20 30 q gs1 pre-vth gate-to-source charge ??? 4.8 ??? ? v ds = 15v q gs2 post-vth gate-to-source charge ??? 2.6 ??? nc v gs = 4.5v q gd gate-to-drain charge ??? 6.5 ??? ? i d = 20a q godr gate charge overdrive ??? 6.1 ??? ? q sw switch charge (q gs2 + q gd ) ??? 9.1 ??? ? q oss output charge ??? 11 ??? nc v ds = 16v, v gs = 0v r g gate resistance ??? 1.9 ??? ? ? t d(on) turn-on delay time ??? 12 ??? v dd = 15v, v gs = 4.5v t r rise time ??? 35 ??? ns i d = 20a t d(off) turn-off delay time ??? 18 ??? ? r g =1.8 ? t f fall time ??? 12 ??? ? c iss input capacitance ??? 2496 ??? v gs = 0v c oss output capacitance ??? 524 ??? pf v ds = 10v c rss reverse transfer capacitance ??? 273 ??? ? ? = 1.0mhz avalanche characteristics ???? parameter typ. max. e as single pulse avalanche energy ? ??? 58 i ar avalanche current ? ??? 20 diode characteristics ???? parameter min. typ. max. units conditions i s continuous source current ??? ??? 25 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 278 integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.0 v t j = 25c, i s = 20a, v gs = 0v ? t rr reverse recovery time ??? 15 23 ns t j = 25c, i f = 20a, v dd = 15v q rr reverse recovery charge ??? 14 21 nc di/dt = 300a/s ? ??? ??? 150 v ds = 24v, v gs = 0v, t j = 125c ??? parameter typ. max. units r ? jc (bottom) junction-to-case ? ??? 3.4 r ? jc (top) junction-to-case ? ??? 41 c/w r ? ja junction-to-ambient ? ??? 44 r ? ja (<10s) junction-to-ambient ? ??? 31 thermal resistance free datasheet http://
? IRFHM8326PBF 3 www.irf.com ? 2013 international rectifier march 14, 2013 1.0 2.0 3.0 4.0 5.0 6.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 10v ? 60s pulse width fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature 0 5 10 15 20 25 30 35 40 45 50 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 20a fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v ? 60s pulse width tj = 150c vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.0v 2.75v bottom 2.5v fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.0v 2.75v bottom 2.5v ? 60s pulse width tj = 25c 2.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 10v free datasheet http://
? IRFHM8326PBF 4 www.irf.com ? 2013 international rectifier march 14, 2013 fig 8. maximum safe operating area 0.0 0.4 0.8 1.2 1.6 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v fig 7. typical source-drain diode forward voltage 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 9. maximum drain current vs. case temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.6 1.0 1.4 1.8 2.2 2.6 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 1.0a fig 10. drain-to?source breakdown voltage fig 11. maximum effective transient thermal impedance, junction-to-case 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 i d , d r a i n c u r r e n t ( a ) limited by package 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc limited by source bonding tecnology free datasheet http://
? IRFHM8326PBF 5 www.irf.com ? 2013 international rectifier march 14, 2013 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 3.0 4.0 5.0 6.0 7.0 8.0 9.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 20a t j = 25c t j = 125c fig 12. on? resistance vs. gate voltage fig 13. maximum avalanche energy vs. drain current fig 14. typical avalanche current vs. pulsewidth 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 4.7a 9.8a bottom 20a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse) free datasheet http://
? IRFHM8326PBF 6 www.irf.com ? 2013 international rectifier march 14, 2013 fig 15. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 18a. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 18b. gate charge waveform fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 16b. unclamped inductive waveforms fig 17a. switching time test circuit fig 17b. switching time waveforms free datasheet http://
? IRFHM8326PBF 7 www.irf.com ? 2013 international rectifier march 14, 2013 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 3.3mm x 3.3mm outline package details pqfn 3.3mm x 3.3mm outline part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf free datasheet http://
? IRFHM8326PBF 8 www.irf.com ? 2013 international rectifier march 14, 2013 qualification information ? ? qualification level moisture sensitivity level pqfn 3.3mm x 3.3mm msl1 (per jedec j-std-020d ??? ) rohs compliant yes consumer ?? (per jedec jesd47f ??? guidelines) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ camber not e: 1. dimension measured on the bottom of the cavity. 2. pitch tolerance over any 10 pitches = 0.008 [0.2] 3. esd requirement: 0200volts 4. surface resistivity = 10 to 10 ohms per square inch 5. roll should contain splice-free material 6. engrave resy symbol every 100 sprockets (about 15.75 [400] ( conform supplier specification) ps the camber shall not exceed in 1mm/250 pqfn 3.3mm x 3.3mm outline tape and reel ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales repres entative for further information: http://www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standar d at the time of product release. notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 0.29mh, r g = 50 ? , i as = 20a. ? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at t j of approximately 90c. ? when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. ? calculated continuous current based on maxi mum allowable junction temperature. ? current is limited to 25a by source bonding technology. free datasheet http://
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